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SW13N65K2 PDF预览

SW13N65K2

更新时间: 2024-09-19 17:01:27
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
9页 1576K
描述
TO-220F,TO-251,TO-252,TO-220,TO-262N,TO-263 ...

SW13N65K2 数据手册

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SW13N65K2  
N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/  
DFN5*6/QFN8*8 MOSFET  
Features  
QFN8*8  
TO220F  
TO220 TO262N  
DFN5*6  
TO263  
TO251 TO252  
BVDSS : 650V  
ID : 13A  
High ruggedness  
5
1
8
Low RDS(ON) (Typ 0.24Ω)  
@VGS=10V  
2
3
4
7
6
5
RDS(ON) : 0.24Ω  
1
1
1
1
1
1
Low Gate Charge (Typ 28nC)  
Improved dv/dt Capability  
100% Avalanche Tested  
Application: LED, Charger,  
Adaptor  
2
3
2
2
2
2
1
2 3 4  
2
3
3
3
3
D
3
TO220F/TO251/TO252/TO220/TO262N/TO263:1. Gate 2. Drain 3. Source  
DFN5*6: 4.Gate 5,6,7,8. Drain 1,2,3 Source  
G
QFN8*8:1. Gate 2,3,4.Source 5.Drain  
S
General Description  
This power MOSFET is produced with super junction advanced technology of SAMWIN.  
This technology enable the power MOSFET to have better characteristics, Including fast  
switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.  
Order Codes  
Item  
1
2
3
4
5
6
7
8
Sales Type  
Marking  
Package  
TO-220F  
TO-251  
TO-252  
TO-220  
TO-262N  
TO-263  
DFN5*6  
QFN8*8  
Packaging  
TUBE  
TUBE  
REEL  
TUBE  
TUBE  
TUBE  
REEL  
REEL  
SW F 13N65K2  
SW I 13N65K2  
SW D 13N65K2  
SW P 13N65K2  
SW J 13N65K2  
SW B 13N65K2  
SW HA 13N65K2  
SW HC 13N65K2  
SW13N65K2  
SW13N65K2  
SW13N65K2  
SW13N65K2  
SW13N65K2  
SW13N65K2  
SW13N65K2  
SW13N65K2  
Absolute maximum ratings  
Value  
Symbol  
Parameter  
Drain to source voltage  
Continuous drain current (@TC=25oC)  
Continuous drain current (@TC=100oC)  
Drain current pulsed  
Unit  
DFN5*QFN8*  
TO220  
TO262  
N
TO251TO252TO220  
TO263  
F
6
8
VDSS  
ID  
650  
V
A
13*  
8.2*  
39  
A
IDM  
VGS  
(note 1)  
A
Gate to source voltage  
± 30  
200  
21  
V
EAS  
Single pulsed avalanche energy  
Repetitive avalanche energy  
(note 2)  
(note 1)  
mJ  
mJ  
V/ns  
V/ns  
W
EAR  
dv/dt  
dv/dt  
MOSFET dv/dt ruggedness (@VDS=0~400V)  
30  
Peak diode recovery dv/dt  
(note 3)  
20  
Total power dissipation (@TC=25oC)  
Total power dissipation (@Ta=25oC)  
Derating factor above 25oC  
33.8 143.7 134.4 178.6 168.9 158.2  
96  
PD  
3.7  
W
0.27 1.15 1.08 1.4 1.35 1.27 0.03 0.8 W/oC  
Operating junction temperature & storage  
temperature  
TSTG, TJ  
-55 ~ + 150  
300  
oC  
Maximum lead temperature for soldering  
purpose, 1/8 from case for 5 seconds.  
TL  
oC  
*. Drain current is limited by junction temperature.  
Thermal characteristics  
Value  
Symbol  
Parameter  
Unit  
DFN5* QFN8*  
TO220  
F
TO262  
TO251TO252TO220  
TO263  
N
6
8
Rthjc Thermal resistance, Junction to case  
Rthja Thermal resistance, Junction to ambient  
3.7 0.87 0.93 0.7 0.74 0.79  
50 79 54 64  
1.3 oC/W  
oC/W  
34(Note)  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Jun. 2018. Rev. 6.0  
1/9  

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