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SW13N60D PDF预览

SW13N60D

更新时间: 2024-09-19 17:02:03
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
6页 596K
描述
TO-220F

SW13N60D 数据手册

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SW13N60D  
N-channel Enhanced mode TO-220F MOSFET  
Features  
TO-220F  
BVDSS : 600V  
High ruggedness  
Low RDS(ON) (Typ 0.5)@VGS=10V  
Low Gate Charge (Typ 54nC)  
Improved dv/dt Capability  
100% Avalanche Tested  
ID  
: 13A  
RDS(ON) : 0.5Ω  
2
1
Application: LED, PC Power, Charger  
2
3
1
1. Gate 2. Drain 3. Source  
General Description  
3
This power MOSFET is produced with advanced technology of SAMWIN.  
This technology enable the power MOSFET to have better characteristics, including fast  
switching time, low on resistance, low gate charge and especially excellent avalanche  
characteristics.  
Order Codes  
Item  
1
Sales Type  
Marking  
Package  
TO-220F  
Packaging  
SW F 13N60D  
SW13N60D  
TUBE  
Absolute maximum ratings  
Symbol  
Parameter  
Value  
Unit  
V
VDSS  
Drain to source voltage  
600  
Continuous drain current (@TC=25oC)  
Continuous drain current (@TC=100oC)  
Drain current pulsed  
13*  
A
ID  
8*  
52  
A
IDM  
VGS  
EAS  
(note 1)  
A
Gate to source voltage  
± 30  
507  
V
Single pulsed avalanche energy  
Repetitive avalanche energy  
Peak diode recovery dv/dt  
(note 2)  
(note 1)  
(note 3)  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
50  
5
Total power dissipation (@TC=25oC)  
Derating factor above 25oC  
26.6  
0.2  
PD  
W/oC  
oC  
TSTG, TJ  
TL  
Operating junction temperature & storage temperature  
-55 ~ + 150  
Maximum lead temperature for soldering  
purpose, 1/8 from case for 5 seconds.  
300  
oC  
*. Drain current is limited by junction temperature.  
Thermal characteristics  
Symbol  
Parameter  
Value  
Unit  
Rthjc  
Rthja  
Thermal resistance, Junction to case  
Thermal resistance, Junction to ambient  
4.7  
51  
oC/W  
oC/W  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Jul. 2018. Rev. 2.0  
1/6  

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