Datasheet > SW13N50D

SW13N50D

更新时间： 2024-11-10 17:01:39

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	816K
描述
TO-220F,TO-220

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SW13N50D 数据手册

SW13N50D

N-channel Enhancement mode TO-220F/TO-220 MOSFET

BV_DSS: 500V

I_D: 13A

TO-220F

Features

TO-220

 High ruggedness

_DS(ON): 0.46Ω

 R_DS(ON)(Typ 0.46Ω)@V_GS=10V

 Gate Charge (Typ 47nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED,Charger

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

SW F 13N50D

SW P 13N50D

Marking

Package

TO-220F

TO-220

Packaging

TUBE

SW13N50D

TUBE

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220F

TO-220

V_DSS

I_D

Drain to Source Voltage

500

13*

8.2*

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

Gate to Source Voltage

±30

408

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

192.3

1.54

P_D

_STG, T_J

T_L

0.34

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

300

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220F

TO-220

0.65

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

2.9

^oC/W

Apr. 2019. Rev. 4.0

1/6

12 3 4 5 6

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