Datasheet > SW12N65DA

SW12N65DA

更新时间： 2024-09-19 17:01:39

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	685K
描述
TO-220SF

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中文翻译

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数据手册

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SW12N65DA 数据手册

SW12N65DA

N-channel Enhanced mode TO-220SF MOSFET

TO-220SF

Features

BV_DSS: 650V

I_D

: 12A

 High ruggedness

 Low R_DS(ON)(Typ 0.75Ω)@V_GS=10V

 Low Gate Charge (Typ 43nC)

 Improved dv/dt Capability

 100% Avalanche Tested

R_DS(ON):0.75 Ω

 Application:LED, Charger, PC Power

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

Packaging

TUBE

SW MN 12N65DA

SW12N65DA

TO-220SF

Absolute maximum ratings

Symbol

Parameter

Value

650

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

12*

I_D

7.6*

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

±30

313

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

P_D

T_STG, T_J

T_L

0.3

W/^oC

^oC

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

Parameter

Value

Unit

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

3.2

^oC/W

Apr. 2019. Rev. 3.0

1/6

12 3 4 5 6

中文翻译

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