Datasheet > SW12N65

SW12N65

更新时间： 2024-09-18 12:20:31

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	1272K
描述
N-channel MOSFET

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SW12N65 数据手册

SAMWIN

SW12N65

N-channel MOSFET

TO-220F

TO-220

BV_DSS: 650V

Features

I_D

: 12.0A

■ High ruggedness

_DS(ON): 0.8ohm

■ R_DS(ON)(Max 0.8 Ω)@V_GS=10V

■ Gate Charge (Typ 47nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology

like a electronic ballast, and also low power switching mode power appliances.

Absolute maximum ratings

Value

650

Symbol

V_DSS

I_D

Parameter

Unit

TO-220

TO-220F

Drain to Source Voltage

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

12.0

7.0

12.0*

7.0*

I_DM

V_GS

E_AS

(note 1)

Gate to Source Voltage

±30

797

16.5

5.0

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

165

54*

P_D

1.32

0.43

W/^oC

^oC

T_STG, T_JOperating Junction Temperature & Storage Temperature

-55 ~ + 150

300

Maximum Lead Temperature for soldering

T_L

^oC

purpose, 1/8 from Case for 5 seconds.

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220

0.76

TO-220F

2.30

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

^oC/W

0.5

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

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