Datasheet > SW110R03VT

SW110R03VT

更新时间： 2024-04-09 19:00:58

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	683K
描述
SOP-8

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SW110R03VT 数据手册

SW110R03VT

N-channel Enhanced mode SOP8 MOSFET

Features

BV_DSS: 30V

I_D: 11A

SOP8

 High ruggedness

 Low R_DS(ON)(Typ 9.8mΩ)@V_GS=4.5V

 Low R_DS(ON)(Typ 8.3mΩ)@V_GS=10V

 Low Gate Charge (Typ 24nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:DC-DC Converter,Motor

Control,Synchronous Rectification

R_DS(ON): 9.8mΩ@V_GS=4.5V

8.3mΩ@V_GS=10V

4.Gate 5,6,7,8.Drain 1,2,3.Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

SOP8

Packaging

REEL

SW K 110R03VT

SW110R03VT

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_a=25^oC)

Continuous drain current (@T_a=70^oC)

Drain current pulsed

11*

I_D

10*

I_DM

V_GS

E_AS

(note 1)

Gate to source voltage

± 20

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

2.3

Total power dissipation (@T_a=25^oC)

Derating factor above 25^oC

P_D

0.02

W/^oC

^oC

T_STG, T_J

Operating junction temperature & storage temperature

-55 ~ + 150

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

R_thja

Parameter

Thermal resistance, Junction to ambient

Value

53.5

Unit

^oC/W

Note: R_thjais the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R_thjcis guaranteed by design while R_thcais determined by the user's

board design.

SOP-8 R_thja: 53.5^oC/W on a 1 in²pad of 2oz copper.

Aug. 2019. Rev. 2.0

1/6

12 3 4 5 6

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