Datasheet > SW10N70K

SW10N70K

更新时间： 2024-04-09 19:01:28

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	905K
描述
TO-220F,TO-252

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SW10N70K 数据手册

SW10N70K

N-channel Enhanced mode TO-220F/TO-252 MOSFET

Features

TO-220F

TO-252

BV_DSS: 700V

I_D: 10A

 High ruggedness

 Low R_DS(ON)(Typ 0.36Ω)@V_GS=10V

 Low Gate Charge (Typ 29nC)

 Improved dv/dt Capability

 100% Avalanche Tested

_DS(ON): 0.36Ω

 Application:Charger,LED,TV-Power

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

SW F 10N70K

SW D 10N70K

Marking

Package

TO-220F

TO-252

Packaging

SW10N70K

TUBE

REEL

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220F

TO-252

V_DSS

I_D

Drain to source voltage

700

10*

6.3*

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

(note 1)

Gate to source voltage

±30

120

E_AS

Single pulsed avalanche energy

Repetitive avalanche energy

(note 2)

(note 1)

V/ns

E_AR

dv/dt

MOSFET dv/dt ruggedness (@VDS=0~400V)

Peak diode recovery dv/dt

(note 3)

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

25.5

0.2

113.6

0.9

P_D

_STG, T_J

T_L

W/^oC

^oC

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220F

TO-252

1.1

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

4.9

^oC/W

48.7

Apr. 2019. Rev. 6.0

1/6

12 3 4 5 6

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