Datasheet > SW090R15ET

SW090R15ET

更新时间： 2024-04-09 18:59:13

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	645K
描述
TO-220FB

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SW090R15ET 数据手册

SW090R15ET

N-channel Enhanced mode TO-220FB MOSFET

Features

TO-220FB

 High ruggedness

BV_DSS: 150V

 Low R_DS(ON)(Typ 9mΩ)@V_GS=10V

 Low Gate Charge (Typ 79nC)

 Improved dv/dt Capability

I_D

: 100A

R_DS(ON): 9mΩ

 100% Avalanche Tested

 Application: Synchronous Rectification,

Li Battery Protect Board, Inverter

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

Packaging

SW X 090R15ET

SW090R15ET

TO-220FB

TUBE

Absolute maximum ratings

Symbol

Parameter

Value

150

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

100*

80*

I_D

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

400

Gate to source voltage

± 20

787.5

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

208

P_D

1.7

W/^oC

^oC

T_STG, T_J

T_L

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

Parameter

Value

Unit

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

0.6

^oC/W

Jul. 2018. Rev. 2.0

1/6

12 3 4 5 6

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