SW090R08ET
N-channel Enhanced mode TO-220/TO-263 MOSFET
Features
TO-220
TO-263
BVDSS : 80V
ID : 80A
High ruggedness
Low RDS(ON) (Typ 9.0mΩ)@VGS=10V
Low Gate Charge (Typ 77nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
R
DS(ON) : 9.0mΩ
2
1
1
2
2
3
3
1
1. Gate 2. Drain 3. Source
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
Sales Type
Marking
Package
TO-220
TO-263
Packaging
TUBE
SW P 090R08ET
SW B 090R08ET
SW090R08ET
SW090R08ET
2
TUBE
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
TO-263
VDSS
ID
Drain to source voltage
80
80*
50*
320
±20
251
14
V
A
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
A
IDM
VGS
EAS
(note 1)
A
Gate to source voltage
V
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
5
Total power dissipation (@TC=25oC)
Derating factor above 25oC
192.3
1.5
126.3
1.0
PD
W/oC
oC
TSTG, TJ
TL
Operating junction temperature & storage temperature
-55 ~ + 150
300
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220
TO-263
0.99
Rthjc
Rthja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
0.65
54
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2019. Rev. 6.0
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