Datasheet > SW088R06VT

SW088R06VT

更新时间： 2024-10-20 17:01:43

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	688K
描述
TO-220,TO-263

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中文翻译

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SW088R06VT 数据手册

SW088R06VT

N-channel Enhanced mode TO-220/TO-263 MOSFET

Features

TO-220

TO-263

BV_DSS: 60V

I_D: 100A

 High ruggedness

 Low R_DS(ON)(Typ 10mΩ)@V_GS=4.5V

(Typ 8.2mΩ)@V_GS=10V

 Low Gate Charge (Typ 48nC)

 Improved dv/dt Capability

R_DS(ON): 10mΩ@V_GS=4.5V

8.2mΩ@V_GS=10V

 100% Avalanche Tested

 Application: Electronic Ballast, Motor Control

Synchronous Rectification, Inverter

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

Order Codes

Item

Sales Type

Marking

Package

TO-220

TO-263

Packaging

TUBE

SW P 088R06VT

SW B 088R06VT

SW088R06VT

TUBE

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-220

TO-263

V_DSS

I_D

Drain to source voltage

100*

69*

Continuous drain current (@T_C=25^oC)

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

400

Gate to source voltage

±20

122

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@Tc=25^oC)

Derating factor above 25^oC

195

P_D

1.6

W/^oC

^oC

T_STG, T_J

T_L

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Symbol

Parameter

Unit

TO-220

TO-263

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

0.64

^oC/W

Apr. 2019. Rev. 3.0

1/6

12 3 4 5 6

中文翻译

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