Datasheet > SW085R06V7T

SW085R06V7T

更新时间： 2024-10-20 17:02:11

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	813K
描述
TO-220

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中文翻译

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SW085R06V7T 数据手册

SW085R06V7T

N-channel Enhanced mode TO-220 MOSFET

Features

TO-220

BV_DSS: 60V

 High ruggedness

 Low R_DS(ON)(Typ 10.5mΩ)@V_GS=4.5V

(Typ 8.3mΩ)@V_GS=10V

 Low Gate Charge (Typ 66nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Synchronous Rectification,

Li Battery Protect Board, Inverter

I_D

: 80A

R_DS(ON): 10.5mΩ@VGS=4.5V

8.3mΩ@VGS=10V

1. Gate 2.Drain 3.Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics,

including fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics.

Order Codes

Item

Sales Type

Marking

Package

TO-220

Packaging

TUBE

SW P 085R06V7T

SW085R06V7T

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

80*

I_D

Continuous drain current (@T_C=100^oC)

Drain current pulsed

55*

I_DM

V_GS

E_AS

(note 1)

320

Gate to source voltage

±20

195

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

117.9

0.94

-55 ~ + 150

P_D

W/^oC

^oC

T_STG, T_JOperating junction temperature & storage temperature

Maximum lead temperature for soldering

T_L

300

^oC

purpose, 1/8 from case for 5 seconds.

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

R_thjc

Parameter

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

Value

1.06

Unit

^oC/W

R_thja

Aug. 2019. Rev. 0.5

1/6

12 3 4 5 6

中文翻译

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