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SW072R08ET PDF预览

SW072R08ET

更新时间: 2024-10-20 17:02:07
品牌 Logo 应用领域
芯派科技 - SEMIPOWER /
页数 文件大小 规格书
6页 1029K
描述
TO-220,TO-263

SW072R08ET 数据手册

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SW072R08ET  
N-channel Enhanced mode TO-263/TO-220 MOSFET  
Features  
TO-263  
TO-220  
BVDSS : 80V  
ID : 100A  
DS(ON) : 6.6m  
High ruggedness  
Low RDS(ON) (Typ 6.6m)@VGS=10V  
Low Gate Charge (Typ 60nC)  
Improved dv/dt Capability  
R
2
100% Avalanche Tested  
Application:Synchronous Rectification,  
Inverter, Li Battery Protect Board  
1
1
2
2
3
3
1
1. Gate 2. Drain 3. Source  
General Description  
3
This power MOSFET is produced with advanced technology of SAMWIN.  
This technology enable the power MOSFET to have better characteristics, including fast  
switching time, low on resistance, low gate charge and especially excellent avalanche  
characteristics.  
Order Codes  
Item  
1
Sales Type  
Marking  
Package  
TO-263  
TO-220  
Packaging  
TUBE  
SW B 072R08ET  
SW P 072R08ET  
SW072R08ET  
SW072R08ET  
2
TUBE  
Absolute maximum ratings  
Value  
Symbol  
Parameter  
Unit  
TO-263  
TO-220  
VDSS  
ID  
Drain to source voltage  
80  
100*  
70*  
400  
±20  
571  
54  
V
A
Continuous drain current (@TC=25oC)  
Continuous drain current (@TC=100oC)  
Drain current pulsed  
A
IDM  
VGS  
EAS  
(note 1)  
A
Gate to source voltage  
V
Single pulsed avalanche energy  
Repetitive avalanche energy  
Peak diode recovery dv/dt  
(note 2)  
(note 1)  
(note 3)  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
5
Total power dissipation (@TC=25oC)  
Derating factor above 25oC  
174.4  
1.2  
220.6  
1.5  
PD  
TSTG, TJ  
TL  
W/oC  
oC  
Operating junction temperature & storage temperature  
-55 ~ + 175  
Maximum lead temperature for soldering  
purpose, 1/8 from case for 5 seconds.  
300  
oC  
*. Drain current is limited by junction temperature.  
Thermal characteristics  
Value  
Symbol  
Parameter  
Unit  
TO-263  
0.86  
TO-220  
0.68  
53  
Rthjc  
Rthja  
Thermal resistance, Junction to case  
Thermal resistance, Junction to ambient  
oC/W  
oC/W  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
Sep. 2019. Rev. 6.0  
1/6  

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