Datasheet > SW070R08E7T

SW070R08E7T

更新时间： 2024-10-20 17:02:07

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
6页	839K
描述
TO-220

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数据手册

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SW070R08E7T 数据手册

SW070R08E7T

N-channel Enhanced mode TO-220 MOSFET

Features

TO-220

BV_DSS: 80V

 High ruggedness

I_D

: 100A

 Low R_DS(ON)(Typ 7.6mΩ)@V_GS=10V

 Low Gate Charge (Typ 107nC)

 Improved dv/dt Capability

R_DS(ON): 7.6mΩ

 100% Avalanche Tested

 Application:Synchronous Rectification,

Li Battery Protect Board, Inverter

1. Gate 2.Drain 3.Source

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics,

including fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics.

Order Codes

Item

Sales Type

Marking

Package

Packaging

TUBE

SW P 070R08E7T

SW070R08E7T

TO-220

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

Drain to source voltage

Continuous drain current (@T_C=25^oC)

100*

73*

I_D

Continuous drain current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

400

Gate to source voltage

±20

185

Single pulsed avalanche energy

Repetitive avalanche energy

Peak diode recovery dv/dt

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

Total power dissipation (@T_C=25^oC)

Derating factor above 25^oC

187

P_D

1.5

W/^oC

^oC

T_STG, T_J

T_L

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

R_thjc

Parameter

Value

0.67

Unit

^oC/W

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

R_thja

Apr. 2019. Rev. 0.5

1/6

12 3 4 5 6

中文翻译

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