Datasheet > SVT078R0ND

SVT078R0ND

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	1011K
描述
种类:N-Channel;漏源电压（Vdss）:68V;持续漏极电流（Id）（在25°C时）:88A;Vgs(th)(V):±20;漏源导通电阻:7.5mΩ@10V

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SVT078R0ND 数据手册

UMW

SVT078R0ND

68V N-Channel Power Mosfet

UMW SVT078R0ND

General Description

These N-channel enhancement mode power mosfets used

advanced trench technology design, provided excellent Rdson

and low gate charge. Which accords with the RoHS standard.

Features

VDS = 68V,ID =88A

RDS(ON),6.3mΩ(Typ) @ VGS =10V

Low On-Resistance

Low gate charge

Fast switching

Low reverse transfer capacitances

100% single pulse avalanche energy test

100% ΔVDS test

Application

Power switching applications

DC-DC converters

UPS power supply

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

SVT078R0ND

TO-252

330mm

12mm

2500

Absolute Maximum Ratings(TA=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

TC=25℃

Drain Current-Continuous^Note3

I_D

TC=100℃

Drain Current-Pulsed^Note1

I_DM

E_AS

P_D

292

Avalanche Energy^Note4

550

℃

Maximum Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

TC=25℃

167

T_STG

T_J

-55 to +150

℃

Thermal Resistance

Parameter

Symbol

Min.

Typ.

Max

Unit

℃/W

Thermal Resistance,Junction to Case-sink

Thermal Resistance,Junction to Ambient

R_θJC

R_θJA

0.9

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