Datasheet > SVD2N60T

SVD2N60T

更新时间： 2024-09-30 06:14:59

品牌	Logo	应用领域
士兰微 - SILAN		/
页数	文件大小	规格书
6页	379K
描述
2A, 600V NChannel MOSFET

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SVD2N60T 数据手册

SVD2N60T

2A, 600V N•Channel MOSFET

GENERAL DESCRIPTION

SVD2N60T is an N•channel enhancement mode power MOSfield

effect transistor which is produced using Silan proprietary

Rin^TMstructure DMOS technology. The improved planar stripecell

and the improved guarding ring terminal havbeen especiall

tailored to minimize on•state resistance, provide superior switching

performance, and withstand high energy pulse in the avalan

and commutation mode.

S•

1.Gate 2.Drain 3.Source

These devices are widely used in AC•DC power suppliers, DC•CD

converters and H•bridge PWM motor drivers.

FEATURES

TO•220•3L

2A,600V,DRS(on)(typ.)=4.0W@VGS=10V

Low gate charge

Low rsCs

Fast switching

Improved dv/dt capability

ORDERING SPECIFICATIONS

Part No.

Package

Marking

Shipping

TO•220•3L

SVD2N60T

50Unit/Tube

ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)

Parameter

Drain•Source Voltage

Symbol

VDS

Value

600

Unit

Gate•Source Voltage

Drain Current

±30

VGS

2.0

Drain Current Pulsed

Power Dissipation(TC=25°C)

IDM

•Derate above 25 °C

0.22

W/°C

°C

Single Pulsed Avalanche Energy (Note 1)

Repetitive Avalanche Energy

Operation Junction Temperature

Storage Temperature

EAS

EAR

120

5.4

•55̚+150

Tstg

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.2

2009.07.09

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