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2N7008 PDF预览

2N7008

更新时间: 2024-01-14 16:40:18
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关
页数 文件大小 规格书
2页 21K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

2N7008 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:T226-3Reach Compliance Code:not_compliant
风险等级:5.92配置:Single
最大漏极电流 (Abs) (ID):0.15 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.4 W子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

2N7008 数据手册

 浏览型号2N7008的Datasheet PDF文件第2页 
2N7008  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSS  
/
RDS(ON)  
ID(ON)  
(min)  
BVDGS  
(max)  
TO-92  
60V  
7.5  
500mA  
2N7008  
Features  
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
Advanced DMOS Technology  
These enhancement-mode (normally-off) transistors utilize a  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces devices with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inher-  
ent in MOS devices. Characteristic of all MOS structures, these  
devices are free from thermal runaway and thermally-induced  
secondary breakdown.  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral Source-Drain diode  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
High input impedance and high gain  
Complementary N- and P-channel devices  
Applications  
Motor controls  
Package Options  
Converters  
Amplifiers  
Switches  
Power supply circuits  
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
BVDSS  
BVDGS  
± 30V  
S G D  
TO-92  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
* Distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
7-15  

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