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2N7002 PDF预览

2N7002

更新时间: 2024-01-07 18:18:42
品牌 Logo 应用领域
超科 - SUPERTEX 晶体晶体管开关光电二极管
页数 文件大小 规格书
4页 30K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

2N7002 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2N7002 数据手册

 浏览型号2N7002的Datasheet PDF文件第2页浏览型号2N7002的Datasheet PDF文件第3页浏览型号2N7002的Datasheet PDF文件第4页 
2N7002  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
TO-236AB*  
Product marking for TO-236AB:  
702  
BVDSS  
/
RDS(ON)  
ID(ON)  
(min)  
BVDGS  
(max)  
60V  
7.5  
0.5A  
2N7002  
where = 2-week alpha date code  
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.  
Features  
Advanced DMOS Technology  
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
These enhancement-mode (normally-off) transistors utilize a  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces devices with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inher-  
ent in MOS devices. Characteristic of all MOS structures, these  
devices are free from thermal runaway and thermally-induced  
secondary breakdown.  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral Source-Drain diode  
High input impedance and high gain  
Complementary N- and P-channel devices  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Applications  
Motor controls  
Converters  
Package Options  
Amplifiers  
Switches  
Power supply circuits  
Driver (relays, hammers, solenoids, lamps, memories,  
displays, bipolar transistors, etc.)  
Drain  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
BVDSS  
Drain-to-Gate Voltage  
BVDGS  
± 30V  
Gate  
Source  
Gate-to-Source Voltage  
TO-236AB  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
(SOT-23)  
top view  
Soldering Temperature*  
* Distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
7-9  

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