2N7002
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
TO-236AB*
Product marking for TO-236AB:
702❋
BVDSS
/
RDS(ON)
ID(ON)
(min)
BVDGS
(max)
60V
7.5Ω
0.5A
2N7002
where ❋ = 2-week alpha date code
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Features
Advanced DMOS Technology
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Low CISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
Motor controls
Converters
Package Options
Amplifiers
Switches
Power supply circuits
Driver (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Drain
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
± 30V
Gate
Source
Gate-to-Source Voltage
TO-236AB
Operating and Storage Temperature
-55°C to +150°C
300°C
(SOT-23)
top view
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
7-9