Datasheet > SUP17N25-165

SUP17N25-165

更新时间： 2024-09-24 01:25:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	72K
描述
N-Channel 250-V (D-S) 175 Â°C MOSFET

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SUP17N25-165 数据手册

SUP17N25-165

Vishay Siliconix

N-Channel 250-V (D-S) 175 °C MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

175 °C Junction Temperature

V_DS(V)

r_DS(on)(Ω)

I_D(A)

•

0.165 at V_GS= 10 V

250

TO-220AB

G D

Top View

Ordering Information: SUP17N25-165-E3

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

250

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)^b

I_D

T_C= 125 °C

9.8

I_DM

I_AS

Pulsed Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

E_AS

L = 0.1 mH

T_C= 25 °C

T_A= 25 °C

1.25

136^b

3.75^a

P_D

Maximum Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient^a

Symbol

Limit

Unit

R_thJA

°C/W

R_thJC

Junction-to-Case (Drain)

1.1

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

b. See SOA curve for voltage derating.

Document Number: 72850

S-71599-Rev. B, 30-Jul-07

www.vishay.com

12 3 4 5 6

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