SUP15P01-52

更新时间： 2024-09-22 21:55:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	48K
描述
P-Channel 8-V (D-S), 175C MOSFET

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中文翻译

获取价格

数据手册

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SUP15P01-52 数据手册

SUP/SUB15P01-52

Vishay Siliconix

P-Channel 8-V (D-S), 175_C MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.052 @ V = –4.5 V

–15

–8

0.070 @ V = –2.5

–10

0.105 @ V = –1.8

–10.5

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D S

SUB15P01-52

Top View

P-Channel MOSFET

SUP15P01-52

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

–8

–15

–8.7

–25

–10

= 25_C

Continuous Drain Current

(T = 175_C)

= 125_C

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

L = 0.1 mH

= 25_C (TO-220AB and TO-263)

Power Dissipation

= 25_C (TO-263)

2.1

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Junction-to-Ambient

Junction-to-Case

Junction-to-Lead

PCB Mount (TO-263)

thJA

thJC

_C/W

thJL

Notes:

a. Package limited.

b. Duty cycle v 1%.

c. When mounted on 1” square PCB (FR-4 material).

d. See SOA curve for voltage derating.

Document Number: 71085

S-20966—Rev. C, 01-Jul-02

www.vishay.com

12 3 4

中文翻译

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