Datasheet > SUP10250E

SUP10250E

更新时间： 2024-09-24 14:54:35

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威世 - VISHAY		/
页数	文件大小	规格书
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描述
N-Channel 250 V (D-S) 175 °C MOSFET

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SUP10250E 数据手册

SUP10250E

Vishay Siliconix

www.vishay.com

N-Channel 250 V (D-S) 175 °C MOSFET

FEATURES

• ThunderFET^®power MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)() MAX.

I_D(A)

Q_g(TYP.)

• Tuned for the lowest R_DS-C_ossFOM

• Maximum 175 °C junction temperature

• 100 % R_gand UIS tested

0.0315 at V_GS= 10 V

0.0325 at V_GS= 7.5 V

250

57.6 nC

• Material categorization:

for definitions of compliance please see

TO-220AB

www.vishay.com/doc?99912

APPLICATIONS

• Power supplies:

- Uninterruptible power supplies

- AC/DC switch-mode power supplies

- Lighting

• Synchronous rectification

Top View

• DC/DC converter

• Motor drive switch

• DC/AC inverter

Ordering Information:

SUP10250E-GE3 (lead (Pb)-free and halogen-free)

N-Channel MOSFET

• Solar micro inverter

• Class D audio amplifier

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

250

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

36.3

Pulsed Drain Current (t = 100 μs)

Avalanche Current

Single Avalanche Energy ^a

I_DM

I_AS

150

L = 0.1 mH

E_AS

180

T_C= 25 °C

375 ^b

125 ^b

-55 to +175

Maximum Power Dissipation ^a

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Junction-to-Ambient (PCB mount) ^c

SYMBOL

R_thJA

LIMIT

UNIT

°C/W

Junction-to-Case (Drain)

R_thJC

0.4

Notes

a. Duty cycle  1 %.

b. See SOA curve for voltage derating.

c. When mounted on 1" square PCB (FR4 material).

S16-1323-Rev. A, 04-Jul-16

Document Number: 79033

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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