Datasheet > SUM75N06-09L_08

SUM75N06-09L_08

更新时间： 2024-09-29 06:14:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	111K
描述
N-Channel 60-V (D-S), 175 °C MOSFET

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SUM75N06-09L_08 数据手册

SUM75N06-09L

Vishay Siliconix

N-Channel 60-V (D-S), 175 °C MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

175 °C Junction Temperature

V_(BR)DSS(V)

r_DS(on)(Ω)

I_D(A)

Available

•

0.0093 at V_GS= 10 V

0.0135 at V_GS= 4.5 V

RoHS*

COMPLIANT

TO-263

DRAIN connected to TAB

D S

Top View

Ordering Information: SUM75N06-09L-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)

I_D

T_C= 100 °C

I_DM

I_AR

Pulsed Drain Current

Avalanche Current

160

Repetitive Avalanche Energy^a

E_AR

L = 0.1 mH

T_C= 25 °C

125

125^b

P_D

Power Dissipation

_A= 25 °C^c

3.75^c

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

(PCB Mount)^c

R_thJA

Junction-to-Ambient

°C/W

R_thJC

Junction-to-Case

1.2

Notes:

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72037

S-80274-Rev. B, 11-Feb-08

www.vishay.com

12 3 4 5 6

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