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SUM70N03-09CP-E3 PDF预览

SUM70N03-09CP-E3

更新时间: 2024-11-25 08:58:11
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
4页 63K
描述
N-Channel 30-V (D-S), 175-LC MOSFET

SUM70N03-09CP-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.36Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):70 A
最大漏极电流 (ID):70 A最大漏源导通电阻:0.014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):93 W最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SUM70N03-09CP-E3 数据手册

 浏览型号SUM70N03-09CP-E3的Datasheet PDF文件第2页浏览型号SUM70N03-09CP-E3的Datasheet PDF文件第3页浏览型号SUM70N03-09CP-E3的Datasheet PDF文件第4页 
SUM70N03-09CP  
Vishay Siliconix  
N-Channel 30-V (D-S), 175_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D Optimized for High- or Low-Side  
D New Low Thermal Resistance Package  
D 100% Rg Tested  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
0.0095 @ V = 20 V  
70  
58  
GS  
30  
0.014 @ V = 4.5 V  
GS  
APPLICATIONS  
D DC/DC Converters  
D Synchronous Rectifiers  
D
TO-263  
G
DRAIN connected to TAB  
G
D S  
Top View  
S
Ordering Information: SUM70N03-09CP  
SUM70N03-09CP-E3 (Lead Free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
V
"20  
T
= 25_C  
70  
40  
C
Continuous Drain Current (T = 175_C)  
I
J
D
T
= 125_C  
C
A
Pulsed Drain Current  
Avalanche Current  
I
100  
35  
DM  
I
AR  
a
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
61  
mJ  
93  
T
T
= 25_C  
C
a
Maximum Power Dissipation  
P
W
D
c
= 25_C  
3.75  
A
Operating Junction and Storage Temperature Range  
T , T  
J
55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
Junction-to-Ambient  
Junction-to-Case  
PCB Mount  
R
40  
thJA  
thJC  
_
C/W  
R
1.6  
Notes  
a. Duty cycle v 1%.  
b. See SOA curve for voltage derating.  
c. When mounted on 1” square PCB (FR-4 material).  
Document Number: 71943  
S-32523—Rev. D, 08-Dec-03  
www.vishay.com  
1

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