Datasheet > SUM70090E-GE3

SUM70090E-GE3

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	194K
描述
MOSFET N-CH 100V 50A D2PK TO263

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中文翻译

获取价格

数据手册

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SUM70090E-GE3 数据手册

SUM70090E

Vishay Siliconix

www.vishay.com

N-Channel 100 V (D-S) MOSFET

FEATURES

• ThunderFET^®power MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)() MAX.

I_D(A) ^c

Q_g(TYP.)

• Maximum 175 °C junction temperature

0.0089 at V_GS= 10 V

0.0093 at V_GS= 7.5 V

• Q_gd/ Q_gsratio < 1 optimizes switching

characteristics

100

33 nC

• 100 % R_gand UIS tested

TO-263

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Power supply

- Secondary synchronous rectification

• DC/DC converter

• Power tools

Top View

• Motor drive switch

• DC/AC inverter

• Battery management

Ordering Information:

SUM70090E-GE3 (lead (Pb)-free and halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

50 ^c

Continuous Drain Current (T_J= 150 °C)

I_D

50 ^c

Pulsed Drain Current (t = 100 μs)

Avalanche Current

I_DM

I_AS

120

Single Avalanche Energy ^a

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C ^b

E_AS

125

Maximum Power Dissipation ^a

P_D

87.5

-55 to +175

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient (PCB Mount) ^b

°C/W

Junction-to-Case (Drain)

R_thJC

1.2

Notes

a. Duty cycle  1 %.

b. When mounted on 1" square PCB (FR4 material).

c. Package limited.

S16-0163-Rev. A, 01-Feb-16

Document Number: 64432

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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