5秒后页面跳转
SUM70042M PDF预览

SUM70042M

更新时间: 2024-12-01 14:55:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 294K
描述
N-Channel 100 V (D-S) MOSFET

SUM70042M 数据手册

 浏览型号SUM70042M的Datasheet PDF文件第2页浏览型号SUM70042M的Datasheet PDF文件第3页浏览型号SUM70042M的Datasheet PDF文件第4页浏览型号SUM70042M的Datasheet PDF文件第5页浏览型号SUM70042M的Datasheet PDF文件第6页浏览型号SUM70042M的Datasheet PDF文件第7页 
SUM70042M  
Vishay Siliconix  
www.vishay.com  
N-Channel 100 V (D-S) MOSFET  
FEATURES  
TO-263 7-Lead  
• TrenchFET® Gen IV power MOSFET  
• Maximum 175 °C junction temperature  
• 100 % Rg and UIS tested  
• Very low Qgd reduces power loss from  
passing trough Vplateau  
S
• Material categorization:  
S
D
S
S
Drain conntected  
to tab  
for  
definitions  
of  
compliance  
www.vishay.com/doc?99912  
please  
see  
S
G
Top View  
D
APPLICATIONS  
• Power supply  
PRODUCT SUMMARY  
- Secondary synchronous rectification  
VDS (V)  
100  
• DC/DC converter  
• Power tools  
R
DS(on) max. () at VGS = 10 V  
DS(on) max. () at VGS = 7.5 V  
0.00383  
0.0045  
84  
R
G
Qg typ. (nC)  
D (A) d  
• Motor drive switch  
• DC/AC inverter  
• Battery management  
• OR-ing / e-fuse  
I
150  
Configuration  
Single  
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
D2PAK (TO-263-7L)  
SUM70042M-GE3  
Lead (Pb)-free and halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
100  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
C = 70 °C  
150 d  
150 d  
500  
Continuous drain current (TJ = 150 °C)  
ID  
T
A
Pulsed drain current (t = 100 μs)  
Avalanche current  
IDM  
IAS  
60  
Single avalanche energy a  
L = 0.1 mH  
TC = 25 °C  
TC = 125 °C  
EAS  
180  
mJ  
W
375 b  
125 b  
-55 to +175  
Maximum power dissipation a  
PD  
Operating junction and storage temperature range  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Junction-to-ambient (PCB mount) c  
SYMBOL  
RthJA  
LIMIT  
40  
UNIT  
°C/W  
Junction-to-case (drain)  
RthJC  
0.4  
Notes  
a. Duty cycle 1 %  
b. See SOA curve for voltage derating  
c. When mounted on 1" square PCB (FR4 material)  
d. Package limited  
S23-0001-Rev. A, 09-Jan-2023  
Document Number: 62189  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SUM70042M相关器件

型号 品牌 获取价格 描述 数据表
SUM70060E VISHAY

获取价格

N-Channel 100 V (D-S) MOSFET
SUM70060E-GE3 VISHAY

获取价格

Power Field-Effect Transistor, 131A I(D), 100V, 0.0062ohm, 1-Element, N-Channel, Silicon,
SUM70090E VISHAY

获取价格

N-Channel 100 V (D-S) MOSFET
SUM70090E-GE3 VISHAY

获取价格

MOSFET N-CH 100V 50A D2PK TO263
SUM70101EL VISHAY

获取价格

P-Channel 100 V (D-S) 175 °C MOSFET
SUM70F SSDI

获取价格

500 mA 6,000 thru 9,000 VOLTS 180 ns FAST RECOVERY RECTIFIER
SUM70FS SSDI

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon, AXIAL, 2 PIN
SUM70FSMS SSDI

获取价格

500 mA 6,000 thru 9,000 VOLTS 180 ns FAST RECOVERY RECTIFIER
SUM70FSMSS SSDI

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon, SMS, 2 PIN
SUM70FSMSTX SSDI

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon, SMS, 2 PIN