Datasheet > SUM33N20-60P

SUM33N20-60P

更新时间： 2024-09-24 01:25:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	93K
描述
N-Channel 200-V (D-S) 175 C MOSFET

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SUM33N20-60P 数据手册

SUM33N20-60P

New Product

Vishay Siliconix

N-Channel 200-V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFETS

150 °C Junction Temperature

100 % UIS and R_gTested

V_(BR)DSS(V)

r_DS(on)(Ω)

I_D(A)

Q_g(Typ)

0.059 at V_GS= 15 V

0.060 at V_GS= 10 V

RoHS

200

COMPLIANT

APPLICATIONS

•

Power Supply

Lighting

Industrial

TO-263

D S

Top View

Ordering Information: SUM33N20-60P-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

200

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)

I_D

T_C= 100 °C

20.8

I_DM

I_AS

Pulsed Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy^a

L = 0.1 mH

T_C= 25 °C

E_AS

156^b

3.12

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^c

Symbol

Limit

Unit

R_thJA

°C/W

R_thJC

Junction-to-Case (Drain)

0.8

Notes:

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

Document Number: 74291

S-62209-Rev. A, 30-Oct-06

www.vishay.com

12 3 4 5 6

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