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STW14NM65N PDF预览

STW14NM65N

更新时间: 2024-11-07 06:14:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
18页 550K
描述
N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

STW14NM65N 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-247包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
风险等级:5.82Is Samacsys:N
雪崩能效等级(Eas):300 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:650 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:0.38 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):48 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STW14NM65N 数据手册

 浏览型号STW14NM65N的Datasheet PDF文件第2页浏览型号STW14NM65N的Datasheet PDF文件第3页浏览型号STW14NM65N的Datasheet PDF文件第4页浏览型号STW14NM65N的Datasheet PDF文件第5页浏览型号STW14NM65N的Datasheet PDF文件第6页浏览型号STW14NM65N的Datasheet PDF文件第7页 
STB14NM65N, STF14NM65N  
STI14NM65N,STP14NM65N,STW14NM65N  
N-channel 650 V, 0.33 , 12 A MDmesh™ II Power MOSFET  
TO-220, TO-220FP, D2PAK, I2PAK, TO-247  
Features  
VDSS  
(@TJmax)  
RDS(on)  
max  
Type  
ID  
3
2
3
1
2
STI14NM65N  
STB14NM65N  
STF14NM65N  
STP14NM65N  
STW14NM65N  
710 V  
710 V  
710 V  
710 V  
710 V  
< 0.38  
< 0.38 Ω  
< 0.38 Ω  
< 0.38 Ω  
< 0.38 Ω  
12 A  
12 A  
12 A(1)  
1
I²PAK  
TO-220  
3
1
12 A  
D²PAK  
12 A  
3
2
3
1
2
1. Limited only by maximum temperature allowed  
1
TO-220FP  
TO-247  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices is designed using the  
second generation of MDmesh™ Technology.  
This revolutionary Power MOSFET associates a  
new vertical structure to the Company’s strip  
layout to yield one of the world’s lowest on-  
resistance and gate charge. It is therefore suitable  
for the most demanding high efficiency  
converters.  
Table 1.  
Order codes  
STI14NM65N  
Device summary  
Marking  
Package  
Packaging  
14NM65N  
14NM65N  
14NM65N  
14NM65N  
14NM65N  
PAK  
Tube  
Tape and reel  
Tube  
STB14NM65N  
STF14NM65N  
STP14NM65N  
STW14NM65N  
PAK  
TO-220FP  
TO-220  
Tube  
TO-247  
Tube  
October 2008  
Rev 2  
1/18  
www.st.com  
18  

STW14NM65N 替代型号

型号 品牌 替代类型 描述 数据表
STW11NM65N STMICROELECTRONICS

类似代替

12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB, ROHS COMPLIANT, TO-247, 3 PIN
STP14NM65N STMICROELECTRONICS

类似代替

N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Powe

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