Datasheet > STW12N150K5

STW12N150K5

更新时间： 2024-09-26 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	754K
描述
N沟道1500 V、1.6 Ohm典型值、7 A MDmesh K5功率MOSFET，TO-247封装

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技术参数
数据手册

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STW12N150K5 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	17 weeks
风险等级：	5.69	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STW12N150K5 数据手册

STW12N150K5

N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh™ K5

Power MOSFET in a TO-247 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max. I_D

P_TOT

STW12N150K5 1500 V

1.9 Ω 7 A 250 W



Industry’s lowest R_{DS(on) *}area

Industry’s best figure of merit (FoM)

Ultra low gate charge

100% avalanche tested

Zener-protected

TO-247

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packing

STW12N150K5

12N150K5

TO-247

Tube

July 2015

DocID027833 Rev 3

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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