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STV60NE06-16 PDF预览

STV60NE06-16

更新时间: 2024-02-05 16:49:54
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 55K
描述
N - CHANNEL 60V - 0.013ohm - 60A PowerSO-10 STripFET POWER MOSFET

STV60NE06-16 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G10针数:10
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84雪崩能效等级(Eas):350 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):60 A
最大漏源导通电阻:0.016 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G10元件数量:1
端子数量:10工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STV60NE06-16 数据手册

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STV60NE06-16  
N - CHANNEL 60V - 0.013- 60A PowerSO-10  
STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STV60NE06-16  
60 V  
< 0.016 Ω  
60 A  
TYPICAL RDS(on) = 0.013 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
LOW GATE CHARGE 100 oC  
APPLICATIONORIENTED  
CHARACTERIZATION  
10  
1
DESCRIPTION  
This Power Mosfet is the latest development of  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalance  
characteristics and less critical alignment steps  
PowerSO-10  
therefore  
reproducibility.  
a
remarkable  
manufacturing  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc. )  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
60  
V
V
60  
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
60  
A
ID  
42  
A
I
DM()  
240  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
150  
W
Derating Factor  
1
6
W/oC  
V/ns  
oC  
oC  
dv/dt  
Tstg  
Tj  
Peak Diode Recovery voltage slope  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
( ) ISD 60 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX  
1
1/6  
May 2000  

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