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STV160NF03LA PDF预览

STV160NF03LA

更新时间: 2024-02-15 09:46:18
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 531K
描述
N-CHANNEL 30V - 0.0021OHM - 160A PowerSO-10 STripFET TM POWER MOSFET

STV160NF03LA 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G10针数:10
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.83雪崩能效等级(Eas):330 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):160 A
最大漏极电流 (ID):160 A最大漏源导通电阻:0.004 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G10
元件数量:1端子数量:10
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):210 W最大脉冲漏极电流 (IDM):640 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STV160NF03LA 数据手册

 浏览型号STV160NF03LA的Datasheet PDF文件第2页浏览型号STV160NF03LA的Datasheet PDF文件第3页浏览型号STV160NF03LA的Datasheet PDF文件第4页浏览型号STV160NF03LA的Datasheet PDF文件第5页浏览型号STV160NF03LA的Datasheet PDF文件第6页浏览型号STV160NF03LA的Datasheet PDF文件第7页 
STV160NF03LA  
N-CHANNEL 30V - 0.0021- 160A PowerSO-10  
STripFET™ POWER MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STV160NF03LA  
30 V  
< 0.003 Ω  
160 A  
TYPICAL R (on) = 0.0021 Ω  
DS  
LOW THRESHOLD DRIVE  
ULTRA LOW ON-RESISTANCE  
ULTRA FAST SWITCHING  
100% AVALANCHE TESTED  
VERY LOW GATE CHARGE  
10  
1
PowerSO-10  
LOW PROFILE, VERY LOW PARASITIC  
INDUCTANCE PowerSO-10 PACKAGE  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
The STV160NF03LA represents the second gen-  
eration of Application Specific STMicroelectronics  
well established STripFET™ process based on a  
very unique strip layout design. The resulting  
MOSFET shows unrivalled high packing density  
with ultra low on-resistance and superior switching  
charactestics. Process simplification also trans-  
lates into improved manufacturing reproducibility.  
This device is particularly suitable for high current,  
low voltage switching application where efficiency  
is crucial  
CONNECTION DIAGRAM (TOP VIEW)  
APPLICATIONS  
BUCK CONVERTERS IN HIGH  
PERFORMANCE TELECOM AND VRMs DC-  
DC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
DS  
Drain-source Voltage (V = 0)  
V
V
GS  
V
Drain-gate Voltage (R = 20 k)  
30  
DGR  
GS  
V
Gate- source Voltage  
± 15  
160  
V
GS  
I (**)  
D
Drain Current (continuos) at T = 25°C  
A
C
I
Drain Current (continuos) at T = 100°C  
113  
A
D
C
I
()  
Drain Current (pulsed)  
640  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
210  
W
C
Derating Factor  
1.4  
W/°C  
mJ  
°C  
°C  
E
AS  
(1)  
Single Pulse Avalanche Energy  
Storage Temperature  
330  
T
stg  
–65 to 175  
T
Max. Operating Junction Temperature  
175  
j
(1) V = 35V, I = 45A, R = 22Ω , L = 330µH, Starting T =25°C  
DD  
D
G
j
() Pulse width limited by safe operating area  
Note: Marking will be STV160NF03AL  
(**)Limited only maximum junction temperature allowed by  
PowerSO-10  
December 2000  
1/8  

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