Datasheet > STV160NF03L_02

STV160NF03L_02

更新时间： 2024-01-24 05:43:45

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	539K
描述
N-CHANNEL 30V - 0.0019OHM - 160A PowerSO-10 STripFET TM POWER MOSFET

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STV160NF03L_02 数据手册

STV160NF03L

N-CHANNEL 30V - 0.0019Ω - 160A PowerSO-10

STripFET™ POWER MOSFET

TYPE

DSS

DS(on)

STV160NF03L

30 V

< 0.0028 Ω

160 A

■

TYPICAL R (on) = 0.0019 Ω

LOW THRESHOLD DRIVE

ULTRA LOW ON-RESISTANCE

ULTRA FAST SWITCHING

100% AVALANCHE TESTED

VERY LOW GATE CHARGE

PowerSO-10

LOW PROFILE, VERY LOW PARASITIC

INDUCTANCE PowerSO-10 PACKAGE

INTERNAL SCHEMATIC DIAGRAM

DESCRIPTION

The STV160NF03L represents the second gener-

ation of Application Specific STMicroelectronics

well established STripFET™ process based on a

very unique strip layout design. The resulting

MOSFET shows unrivalled high packing density

with ultra low on-resistance and superior switching

charactestics. Process simplification also trans-

lates into improved manufacturing reproducibility.

This device is particularly suitable for high current,

low voltage switching application where efficiency

is crucial

CONNECTION DIAGRAM (TOP VIEW)

APPLICATIONS

■

BUCK CONVERTERS IN HIGH

PERFORMANCE TELECOM AND VRMs DC-

DC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 15

160

I (**)

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

113

( )

Drain Current (pulsed)

640

Total Dissipation at T = 25°C

210

W/°C

TOT

Derating Factor

1.4

(1)

Single Pulse Avalanche Energy

Storage Temperature

–65 to 175

°C

stg

Max. Operating Junction Temperature

175

(1) Starting T =25°C , I = 80A, V = 20V

(**)Limited only maximum junction temperature allowed by

PowerSO-10

(●) Pulse width limited by safe operating area

November 2002

1/9

12 3 4 5 6 7...9

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