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STV160NF03L PDF预览

STV160NF03L

更新时间: 2024-01-11 12:42:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 98K
描述
N - CHANNEL 30V - 0.0019ohm - 160A PowerSO-10 STripFET MOSFET

STV160NF03L 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G10针数:10
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.83雪崩能效等级(Eas):330 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):160 A
最大漏极电流 (ID):160 A最大漏源导通电阻:0.004 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G10
元件数量:1端子数量:10
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):210 W最大脉冲漏极电流 (IDM):640 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STV160NF03L 数据手册

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STV160NF03L  
N - CHANNEL 30V - 0.0019- 160A PowerSO-10  
STripFET MOSFET  
TYPE  
VDSS  
RDS(on )  
ID  
STV160NF03L  
30 V < 0.0028 Ω  
160 A  
TYPICAL RDS(on) = 0.0019 Ω  
ULTRA LOW ON-RESISTANCE  
ULTRA FAST SWITCHING  
100% AVALANCHE TESTED  
VERY LOW GATE CHARGE  
LOW THRESHOLD DRIVE  
10  
1
PowerSO-10  
LOW PROFILE, VERY LOW PARASITIC  
INDUCTANCE PowerSO-10 PACKAGE  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
The STV160NF03L represents the second  
generation  
of  
Application  
Specific  
STMicroelectronics well established STripFET  
process based on a very unique strip layout  
design. The resulting MOSFET shows unrivalled  
high packing density with ultra low on-resistance  
and superior switching charactestics. Process  
simplification also translates into improved  
manufacturing reproducibility. This device is  
particularly suitable for high current, low voltage  
switching applicationwhere efficiency is crucial.  
CONNECTION DIAGRAM (TOP VIEW)  
APPLICATIONS  
BUCK CONVERTERS IN HIGH  
PERFORMACE TELECOMAND VRMs  
DC-DC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
30  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
VDGR  
VGS  
30  
20  
V
±
o
ID(**)  
ID  
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
160  
113  
A
A
IDM( ) Drain Current (pulsed)  
640  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
Derating Factor  
160  
W
1.07  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
Max. Operating Junction Temperature  
175  
() Pulse width limited by safe operating area  
( ) Limited only maximum junction temperature allowed by PowerSO-10  
**  
1/8  
November 1999  

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