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STTH812G PDF预览

STTH812G

更新时间: 2024-11-02 03:41:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管高压超快软恢复二极管高压超快速软恢复二极管
页数 文件大小 规格书
11页 142K
描述
Ultrafast recovery - 1200 V diode

STTH812G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:PLASTIC, D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY应用:HIGH VOLTAGE ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.9 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:80 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.1 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

STTH812G 数据手册

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STTH812  
Ultrafast recovery - 1200 V diode  
Main product characteristics  
A
K
IF(AV)  
VRRM  
Tj  
8 A  
1200 V  
175° C  
1.25 V  
50 ns  
A
A
VF (typ)  
trr (typ)  
K
K
TO-220FPAC  
STTH812FP  
TO-220AC  
STTH812D  
Features and benefits  
Ultrafast, soft recovery  
Very low conduction and switching losses  
K
High frequency and/or high pulsed current  
operation  
A
A
High reverse voltage capability  
High junction temperature  
Insulated packages:  
K
NC  
D2PAK  
STTH812G  
TO-220Ins  
STTH812DI  
– TO-220Ins  
Electrical insulation = 2500 VRMS  
Capacitance = 7 pF  
– TO-220FPAC  
Order codes  
Electrical insulation = 2000 VRMS  
Capacitance = 12 pF  
Part Number  
Marking  
Description  
STTH812D  
STTH812G  
STTH812D  
STTH812G  
STTH812G  
STTH812FP  
STTH812DI  
The high quality design of this diode has  
produced a device with low leakage current,  
regularly reproducible characteristics and intrinsic  
ruggedness. These characteristics make it ideal  
for heavy duty applications that demand long term  
reliability.  
STTH812G-TR  
STTH812FP  
STTH812DI  
Such demanding applications include industrial  
power supplies, motor control, and similar  
mission-critical systems that require rectification  
and freewheeling. These diodes also fit into  
auxiliary functions such as snubber, bootstrap,  
and demagnetization applications.  
The improved performance in low leakage current,  
and therefore thermal runaway guard band, is an  
immediate competitive advantage for this device.  
March 2006  
Rev 1  
1/11  
www.st.com  
11  

STTH812G 替代型号

型号 品牌 替代类型 描述 数据表
STTH812G-TR STMICROELECTRONICS

完全替代

Ultrafast recovery - 1200 V diode

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