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STTH30L06CG-TR PDF预览

STTH30L06CG-TR

更新时间: 2024-11-17 17:33:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
8页 111K
描述
600V、30 A双路低压降超高速二极管

STTH30L06CG-TR 数据手册

 浏览型号STTH30L06CG-TR的Datasheet PDF文件第2页浏览型号STTH30L06CG-TR的Datasheet PDF文件第3页浏览型号STTH30L06CG-TR的Datasheet PDF文件第4页浏览型号STTH30L06CG-TR的Datasheet PDF文件第5页浏览型号STTH30L06CG-TR的Datasheet PDF文件第6页浏览型号STTH30L06CG-TR的Datasheet PDF文件第7页 
STTH30L06C  
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER  
Table 1: Main Product Characteristics  
A1  
A2  
I
Up to 2 x 20 A  
600 V  
F(AV)  
K
V
RRM  
T
175°C  
j
V (typ)  
0.95 V  
F
t (max)  
55 ns  
rr  
A2  
A2  
K
K
FEATURES AND BENEFITS  
A1  
A1  
Ultrafast switching  
Low reverse current  
Low thermal resistance  
TO-220AB  
STTH30L06CT  
TO-247  
STTH30L06CW  
Reduces switching & conduction losses  
K
DESCRIPTION  
A2  
The STTH30L06, which is using ST Turbo 2 600V  
technology, is specially suited for use in switching  
power supplies, and industrial applications, as  
rectification and discontinuous mode PFC boost  
diode.  
A1  
2
D PAK  
STTH30L06CG  
Table 2: Order Codes  
Part Number  
STTH30L06CT  
STTH30L06CW  
Marking  
STTH30L06CT  
STTH30L06CW  
Part Number  
STTH30L06CG  
STTH30L06GG-TR  
Marking  
STTH30L06CG  
STTH30L06CG  
Table 3: Absolute Ratings (limiting values, per diode)  
Symbol Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
V
600  
V
A
A
RRM  
I
RMS forward voltage  
30  
F(RMS)  
I
Average forward current  
Tc = 140°C Per diode  
Tc = 125°C Per device  
15  
30  
F(AV)  
δ = 0.5  
Tc = 120°C Per diode  
Tc = 110°C Per device  
20  
40  
I
Surge non repetitive forward current  
Storage temperature range  
tp = 10ms sinusoidal  
130  
-65 to + 175  
175  
A
FSM  
T
°C  
°C  
stg  
T
Maximum operating junction temperature  
j
September 2004  
REV. 1  
1/8  

STTH30L06CG-TR 替代型号

型号 品牌 替代类型 描述 数据表
STTH30L06CW STMICROELECTRONICS

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