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STTH30L06CG PDF预览

STTH30L06CG

更新时间: 2024-11-26 04:30:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管高压超快恢复二极管高压超快恢复二极管快速恢复二极管
页数 文件大小 规格书
8页 111K
描述
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

STTH30L06CG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:PLASTIC, D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.7Is Samacsys:N
应用:HIGH VOLTAGE ULTRA FAST RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:130 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.085 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

STTH30L06CG 数据手册

 浏览型号STTH30L06CG的Datasheet PDF文件第2页浏览型号STTH30L06CG的Datasheet PDF文件第3页浏览型号STTH30L06CG的Datasheet PDF文件第4页浏览型号STTH30L06CG的Datasheet PDF文件第5页浏览型号STTH30L06CG的Datasheet PDF文件第6页浏览型号STTH30L06CG的Datasheet PDF文件第7页 
STTH30L06C  
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER  
Table 1: Main Product Characteristics  
A1  
A2  
I
Up to 2 x 20 A  
600 V  
F(AV)  
K
V
RRM  
T
175°C  
j
V (typ)  
0.95 V  
F
t (max)  
55 ns  
rr  
A2  
A2  
K
K
FEATURES AND BENEFITS  
A1  
A1  
Ultrafast switching  
Low reverse current  
Low thermal resistance  
TO-220AB  
STTH30L06CT  
TO-247  
STTH30L06CW  
Reduces switching & conduction losses  
K
DESCRIPTION  
A2  
The STTH30L06, which is using ST Turbo 2 600V  
technology, is specially suited for use in switching  
power supplies, and industrial applications, as  
rectification and discontinuous mode PFC boost  
diode.  
A1  
2
D PAK  
STTH30L06CG  
Table 2: Order Codes  
Part Number  
STTH30L06CT  
STTH30L06CW  
Marking  
STTH30L06CT  
STTH30L06CW  
Part Number  
STTH30L06CG  
STTH30L06GG-TR  
Marking  
STTH30L06CG  
STTH30L06CG  
Table 3: Absolute Ratings (limiting values, per diode)  
Symbol Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
V
600  
V
A
A
RRM  
I
RMS forward voltage  
30  
F(RMS)  
I
Average forward current  
Tc = 140°C Per diode  
Tc = 125°C Per device  
15  
30  
F(AV)  
δ = 0.5  
Tc = 120°C Per diode  
Tc = 110°C Per device  
20  
40  
I
Surge non repetitive forward current  
Storage temperature range  
tp = 10ms sinusoidal  
130  
-65 to + 175  
175  
A
FSM  
T
°C  
°C  
stg  
T
Maximum operating junction temperature  
j
September 2004  
REV. 1  
1/8  

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