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STTH302RL PDF预览

STTH302RL

更新时间: 2024-11-25 22:19:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管功效PC
页数 文件大小 规格书
5页 46K
描述
HIGH EFFICIENCY ULTRAFAST DIODE

STTH302RL 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-201AD包装说明:D0-201AD, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:8 weeks风险等级:1.28
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180538Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Diodes, Axial Diameter Horizontal Mounting
Samacsys Footprint Name:DO-201ADSamacsys Released Date:2016-03-17 18:36:42
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.75 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:130 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STTH302RL 数据手册

 浏览型号STTH302RL的Datasheet PDF文件第2页浏览型号STTH302RL的Datasheet PDF文件第3页浏览型号STTH302RL的Datasheet PDF文件第4页浏览型号STTH302RL的Datasheet PDF文件第5页 
®
STTH302  
HIGH EFFICIENCY ULTRAFAST DIODE  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
3A  
200 V  
175 °C  
0.75 V  
35 ns  
Tj (max)  
VF (max)  
trr (max)  
FEATURES AND BENEFITS  
Very low conduction losses  
Negligible switching losses  
Low forward and reverse recovery times  
High junction temperature  
DO-201AD  
STTH302  
DESCRIPTION  
The STTH302 which is using ST's new 200V  
planar technology, is specially suited for switching  
mode base drive & transistor circuits.  
The device is also intended for use as a free  
wheeling diode in power supplies and other power  
switching applications.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
200  
V
IF (AV)  
IFSM  
Tstg  
Tj  
3
130  
A
A
Average forward current  
TI = 107°C  
tp = 10ms  
δ = 0.5  
Sinusoidal  
Surge non repetitive forward current  
Storage temperature range  
- 65 to + 175  
175  
°C  
°C  
Maximum operating junction temperature  
THERMAL PARAMETERS  
Symbol  
Parameter  
Value  
Unit  
Rth (j-a)  
25  
°C/W  
Junction-ambient*  
* On infinite heatsink with 10mm lead length.  
November 2001 - Ed: 1A  
1/5  

STTH302RL 替代型号

型号 品牌 替代类型 描述 数据表
STTH302 STMICROELECTRONICS

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