Datasheet > STT6602

STT6602

更新时间： 2022-09-24 15:54:39

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
7页	2989K
描述
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET

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STT6602 数据手册

STT6602

N-Ch: 3.3A, 30V, R_DS(ON)65 mΩ

P-Ch: -2.3A, -30V, R_DS(ON)120 mΩ

N & P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

TSOP-6

DESCRIPTION

The STT6602 uses advanced trench technology to

provide excellent on-resistance and low gate charge.

The complementary MOSFETs form a high-speed

power inverter, suitable for a multitude of applications.

The TSOP-6 package is universally used for all

commercial-industrial surface mount applications.

FEATURES

ꢁ

Low Gate Change

Low On-resistance

D G

ꢁ

MARKING

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

2.70

2.60

1.40

1.10 MAX.

1.90 REF.

3.10

3.00

1.80

0.10

6602

ꢀꢀꢀꢀ

0.60 REF.

0.12 REF.

0°

Date Code

10°

0.95 REF.

0.30

0.50

PACKAGE INFORMATION

TOP VIEW

Package

MPQ

Leader Size

TSOP-6

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Ratings

Parameter

Symbol

Unit

N-Channel

P-Channel

-30

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

3.3

2.6

±20

T_A=25°C

T_A=70°C

-2.3

Continuous Drain Current ²

I_D

-1.8

Pulsed Drain Current ¹

Power Dissipation @T_A=25°C

Linear Derating Factor

I_DM

P_D

-10

1.14

0.01

W / °C

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~150

Thermal Resistance Rating

Maximum Junction to Ambient ²

Notes:

R_θ

110

°C / W

1. Pulse width limited by Max. junction temperature.

2. Surface mounted on 1 in²copper pad of FR4 board, t≦5sec; 180°C / W when mounted on Min. copper pad.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Aug-2011 Rev. A

Page 1 of 7

12 3 4 5 6 7

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