Datasheet > STT5N2VH5

STT5N2VH5

更新时间： 2023-12-20 18:44:05

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	839K
描述
N沟道20 V、0.025 Ohm典型值、5 A STripFET(TM) V功率MOSFET，SOT23-6L封装

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STT5N2VH5 数据手册

STT5N2VH5

N-channel 20 V, 0.025 Ω typ., 5 A STripFET™ V Power MOSFET

in a SOT23-6L package

Datasheet — production data

Features

Order code V_DS

R_DS(on)max

I_D

P_TOT

STT5N2VH5 20 V 0.04 Ω (V_GS=2.5 V) 5 A 1.6 W

• Very low profile package

• Conduction losses reduced

• Switching losses reduced

• 2.5 V gate drive

SOT23-6L

• Very low threshold device

Applications

Figure 1. Internal schematic diagram

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using STMicroelectronics’

STripFET™V technology. The device has been

optimized to achieve very low on-state resistance,

contributing to a FOM that is among the best in its

class.

Table 1. Device summary

Order code

Marking

STD1

Packages

Packaging

STT5N2VH5

SOT23-6L

Tape and reel

March 2014

DocID026116 Rev 1

1/13

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...13

中文翻译

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