Datasheet > STS9NF30L_02

STS9NF30L_02

更新时间： 2024-01-06 15:13:38

品牌	Logo	应用领域
ANALOGICTECH		栅
页数	文件大小	规格书
8页	284K
描述
N-CHANNEL 30V - 0.015 W - 9A SO-8 LOW GATE CHARGE STripFETâ¢ II POWER MOSFET

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STS9NF30L_02 数据手册

STS9NF30L

N-CHANNEL 30V - 0.015 Ω - 9A SO-8

LOW GATE CHARGE STripFET™ II POWER MOSFET

TYPE

DSS

DS(on)

STS9NF30L

30 V

<0.020 Ω

9 A

■

TYPICAL R (on) = 0.020 Ω @ 5 V

TYPICAL Qg = 9.5 nC @ 4.5 V

OPTIMAL R (on) x Qg TRADE-OFF

CONDUCTION LOSSES REDUCED

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power MOSFET is the second

generation of STMicroelectronis unique "Single Feature

Size™" strip-based process. The resulting transistor

shows the best trade-off between on-resistance and gate

charge. When used as high and low side in buck

regulators, it gives the best performance in terms of both

conduction and switching losses. This is extremely

important for motherboards where fast switching and

high efficiency are of paramount importance.

SO-8

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS FOR MOBILE PC

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 18

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

5.7

(•)

Drain Current (pulsed)

Total Dissipation at T = 25°C

2.5

tot

(•) Pulse width limited by safe operating area.

December 2002

1/8

12 3 4 5 6 7 8

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