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STS9NF30L PDF预览

STS9NF30L

更新时间: 2024-02-04 13:17:06
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS
页数 文件大小 规格书
6页 47K
描述
N-CHANNEL 30V - 0.015 ohm - 9A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

STS9NF30L 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SO-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:8.14配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):9 A
最大漏极电流 (ID):9 A最大漏源导通电阻:0.035 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):36 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON

STS9NF30L 数据手册

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STS9NF30L  
N-CHANNEL 30V - 0.015  
- 9A SO-8  
LOW GATE CHARGE STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STS9NF30L  
30 V  
< 0.020 Ω  
9 A  
TYPICAL RDS(on) = 0.018 @ 4.5V  
TYPICAL Qg = 9 nC @ 4.5V  
OPTIMAL RDS(on) x Qg TRADE-OFF  
CONDUCTION LOSSESREDUCED  
SWITCHING LOSSESREDUCED  
DESCRIPTION  
This application specific Power Mosfet is the third  
generation of STMicroelectronics unique ”Single  
Feature Size ” strip-based process. The resul-  
ting transistor shows the best trade-off between  
on-resistance and gate charge. When used as  
high and low side in buck regulators, it gives the  
best performance in termsof both conductionand  
switching losses. This is extremely important for  
motherboards where fast switching and high effi-  
ciency are of paramount importance.  
SO-8  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SPECIFICALLYDESIGNED AND  
OPTIMISED FOR HIGH EFFICIENCY CPU  
CORE DC/DC CONVERTERS FOR MOBILE  
PCs  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
30  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
V
VDGR  
VGS  
30  
± 20  
o
ID  
Drain Current (continuous) at Tc = 25 C  
9
5.6  
A
A
o
Drain Current (continuous) at Tc = 100 C  
IDM( )  
Drain Current (pulsed)  
36  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
2.5  
W
() Pulse width limited by safe operating area  
1/6  
May 2000  

STS9NF30L 替代型号

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