Datasheet > STS8DNH3LL_08

STS8DNH3LL_08

更新时间： 2024-09-23 06:14:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
12页	315K
描述
Dual n-channel 30 V - 0.018 Ω - 8 A - SO-8 low gate charge STripFET™ III Power MOSFET

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STS8DNH3LL_08 数据手册

STS8DNH3LL

Dual n-channel 30 V - 0.018 Ω - 8 A - SO-8

low gate charge STripFET™ III Power MOSFET

Features

Type

V_DSS

R_DS(on)max

I_D

STS8DNH3LL

30 V

< 0.022 Ω

8 A

■ Optimal R

x Qg trade-off @ 4.5 V

DS(on)

■ Conduction losses reduced

■ Switching losses reduced

S0-8

Application

■ Switching applications

Description

Figure 1.

Internal schematic diagram

This product utilizes the latest advanced design

rules of ST’s proprietary STripFET™ technology

which is suitable for the most demanding DC-DC

converter applications where high efficiency is

required.

Table 1.

Device summary

Order code

STS8DNH3LL

Marking

Package

SO-8

Packaging

8DH3LL

Tape & reel

June 2008

Rev 2

1/12

www.st.com

12 3 4 5 6 7...12

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