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STS6NF20V PDF预览

STS6NF20V

更新时间: 2024-02-19 03:42:32
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
8页 259K
描述
N-CHANNEL 20V - 0.030 ohm - 6A SO-8 2.7V-DRIVE STripFET⑩ II POWER MOSFET

STS6NF20V 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.67Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:4360
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:STS6NF20V-1
Samacsys Released Date:2015-04-16 09:48:08Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):6 A最大漏极电流 (ID):6 A
最大漏源导通电阻:0.045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):24 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STS6NF20V 数据手册

 浏览型号STS6NF20V的Datasheet PDF文件第2页浏览型号STS6NF20V的Datasheet PDF文件第3页浏览型号STS6NF20V的Datasheet PDF文件第4页浏览型号STS6NF20V的Datasheet PDF文件第5页浏览型号STS6NF20V的Datasheet PDF文件第6页浏览型号STS6NF20V的Datasheet PDF文件第7页 
STS6NF20V  
N-CHANNEL 20V - 0.030 - 6A SO-8  
2.7V-DRIVE STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
< 0.040 ( @ 4.5 V )  
< 0.045 ( @ 2.7 V )  
STS6NF20V 20 V  
6 A  
TYPICAL R (on) = 0.030 @ 4.5 V  
DS  
TYPICAL R (on) = 0.037 @ 2.7 V  
DS  
ULTRA LOW THRESHOLD  
GATE DRIVE (2.7 V)  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
SO-8  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR DRIVE  
DC-DC CONVERTERS  
BATTERY MANAGEMENT IN NOMADIC  
EQUIPMENT  
POWER MANAGEMENT IN  
PORTABLE/DESKTOP PCs  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
20  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
20  
V
DGR  
GS  
V
Gate- source Voltage  
± 12  
6
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
Drain Current (continuous) at T = 100°C  
3.8  
24  
A
D
C
I
()  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
2.5  
W
tot  
C
() Pulse width limited by safe operating area.  
August 2002  
1/8  
.

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