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STS1DN45K3 PDF预览

STS1DN45K3

更新时间: 2024-09-30 21:21:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 427K
描述
0.5A, 450V, 3.8ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8

STS1DN45K3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:ROHS COMPLIANT, SOP-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.79配置:SEPARATE, 2 ELEMENTS
最小漏源击穿电压:450 V最大漏极电流 (Abs) (ID):0.5 A
最大漏极电流 (ID):0.5 A最大漏源导通电阻:3.8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e4湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.7 W
最大脉冲漏极电流 (IDM):2 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STS1DN45K3 数据手册

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STS1DN45K3  
Dual N-channel 450 V, 3.2 , 0.5 A SuperMESH3™  
Power MOSFET in SO-8  
Preliminary data  
Features  
RDS(on)  
max  
Type  
VDSS  
ID  
Pw  
STS1DN45K3 450 V < 3.8 Ω  
0.5 A  
1.7 W  
100% avalanche tested  
Low input capacitances and gate charge  
Low gate input resistance  
SO-8  
Application  
Switching applications  
Description  
Figure 1.  
Internal schematic diagram  
SuperMESH3™ is a new Power MOSFET  
technology that is obtained via improvements  
applied to STMicroelectronics’ SuperMESH™  
technology combined with a new optimized  
vertical structure. The resulting product has an  
extremely low on resistance, perior dynamic  
performance and high avanche capability,  
making it especially uitable for the most  
demanding applications.  
Table 1.  
Order codes  
STS1DN45K3  
Device summary  
Marking  
Packages  
SO-8  
Packaging  
1ll45  
Tape and reel  
April 2010  
Doc ID 17338 Rev 1  
1/10  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
10  

STS1DN45K3 替代型号

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