Datasheet > STS10P4LLF6

STS10P4LLF6

更新时间： 2024-09-27 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	323K
描述
P沟道40 V、0.0125 Ohm典型值、10 A STripFET F6功率MOSFET，SO-8封装

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STS10P4LLF6 数据手册

STS10P4LLF6

Datasheet

P‑channel -40 V, 12.5 mΩ typ., -10 A STripFET F6

Power MOSFET in SO‑8 package

Features

DS(on)

max.

Order code

STS10P4LLF6

-40 V

15 mΩ

-10 A

•

Very low on-resistance

Very low gate charge

SO-8

High avalanche ruggedness

Low gate drive power loss

D(5, 6, 7, 8)

Applications

•

Switching applications

G(4)

Description

This device is a P-channel Power MOSFET developed using the STripFET F6

technology, with a new trench gate structure. The resulting Power MOSFET exhibits

very low R_DS(on)in all packages.

S(1, 2, 3)

AM01475v4

Product status link

STS10P4LLF6

Product summary

Order code

Marking

STS10P4LLF6

10P4L

Package

Packing

SO-8

Tape and reel

DS10121 - Rev 5 - January 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

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