Datasheet > STS10P3LLH6

STS10P3LLH6

更新时间： 2024-09-27 14:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	281K
描述
P沟道-30 V、0.01 Ohm典型值、-12.5 A STripFET H6功率MOSFET，SO-8封装

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STS10P3LLH6 数据手册

STS10P3LLH6

Datasheet

P-channel -30 V, 10 mΩ typ., -12.5 A, STripFET H6 Power MOSFET

in an SO-8 package

Features

DS(on)

max.

Order code

STS10P3LLH6

-30 V

12 mΩ

-12.5 A

•

Very low on-resistance

Very low gate charge

SO-8

High avalanche ruggedness

Low gate drive power loss

D(5, 6, 7, 8)

Applications

•

Switching applications

G(4)

Description

This device is a P-channel Power MOSFET developed using the STripFET H6

technology with a new trench gate structure. The resulting Power MOSFET exhibits

very low R_DS(on)in all packages.

S(1, 2, 3)

AM01475v4

Product status link

STS10P3LLH6

Product summary

Order code

Marking

STS10P3LLH6

10K3L

Package

Packing

SO-8

Tape and reel

DS10150 - Rev 7 - July 2020

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...13

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