STPS60H100C

更新时间： 2024-09-22 21:56:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	66K
描述
POWER SCHOTTKY RECTIFIER

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中文翻译

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STPS60H100C 数据手册

STPS60H100C

POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

2 x 30 A

100 V

F(AV)

RRM

175°C

0.72 V

V (max)

FEATURES AND BENEFITS

■

High junction temperature capabiliy

Low leakage current

Low thermal resistance

High frequency operation

Avalanche specification

TO-220AB

STPS60H100CT

DESCRIPTION

Dual center tab Schottky rectifier suited for High

Frequency server and telecom base station

SMPS. Packaged in TO-220AB, this device com-

bines high current rating and low volume to en-

hance both reliability and power density of the

application.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

100

RRM

RMS forward voltage

F(RMS)

Average forward current

Tc = 150°C

δ = 0.5

Per diode

Per device

F(AV)

Surge non repetitive forward current

Repetitive peak avalanche power

Storage temperature range

tp = 10ms sinusoidal

tp = 1µs Tj = 25°C

300

18100

FSM

ARM

-65 to + 175

175

°C

stg

Maximum operating junction temperature *

°C

dV/dt Critical rate of rise of reverse voltage

10000

V/µs

dPtot

* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink

dTj Rth(j – a)

Order Codes

Part Number

Marking

STPS60H100CT

August 2004

REV. 1

1/5

12 3 4 5

中文翻译

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