STPS40L45CGY-TR

更新时间： 2024-11-01 12:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		整流二极管
页数	文件大小	规格书
6页	108K
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中文翻译

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数据手册

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STPS40L45CGY-TR 数据手册

STPS40L45CG/CT/CW

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

I_F(AV)

V_RRM

2 x 20 A

45 V

Tj (max)

V_F(max)

150 °C

0.49 V

FEATURES AND BENEFITS

■

LOW FORWARD VOLTAGE DROP MEANING

VERY SMALL CONDUCTION LOSSES

LOW SWITCHING LOSSES ALLOWING HIGH

FREQUENCY OPERATION

AVALANCHE CAPABILITY SPECIFIED

D²PAK

STPS40L45CG

DESCRIPTION

Dual center tap Schottky barrier rectifier designed

for high frequency Switched Mode Power Supplies

and DC to DC converters.

Packaged in TO-220AB, TO-247 and D²PAK

these devices are intended for use in low voltage,

high frequency inverters, free-wheeling and

polarity protection applications.

TO-247

STPS40L45CW

TO-220AB

STPS40L45CT

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

V_RRM

Parameter

Repetitive peak reverse voltage

Value

Unit

I_F(RMS)

I_F(AV)

RMS forward current

Average forward current

Tc = 130°C Per diode

δ = 0.5

Per device

I_FSM

I_RRM

I_RSM

P_ARM

T_stg

230

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 10 ms Sinusoidal

tp = 2 µs square F = 1kHz

tp = 100 µs square

8100

tp = 1µs Tj = 25°C

- 65 to + 150

150

°C

V/µs

Maximum operating junction temperature *

dV/dt

dPtot

10000

Critical rate of rise of reverse voltage

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 4A

1/6

12 3 4 5 6

中文翻译

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