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STPS3045CGY-TR PDF预览

STPS3045CGY-TR

更新时间: 2024-09-14 13:14:07
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意法半导体 - STMICROELECTRONICS /
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5页 76K
描述
Automotive 45 V, 30 A dual Power Schottky Rectifier

STPS3045CGY-TR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:D2PAK-3/2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:2.31其他特性:FREE WHEELING DIODE
应用:POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.84 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:220 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-40 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
参考标准:AEC-Q101最大重复峰值反向电压:45 V
最大反向电流:200 µA子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

STPS3045CGY-TR 数据手册

 浏览型号STPS3045CGY-TR的Datasheet PDF文件第2页浏览型号STPS3045CGY-TR的Datasheet PDF文件第3页浏览型号STPS3045CGY-TR的Datasheet PDF文件第4页浏览型号STPS3045CGY-TR的Datasheet PDF文件第5页 
STPS3045G  
®
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
30 A  
45 V  
Tj  
175°C  
0.63 V  
(max)  
V
F (max)  
K
FEATURES AND BENEFITS  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
A
A
LOW THERMAL RESISTANCE  
HIGH DISSIPATION MINIATURE PACKAGE  
D2PAK  
DESCRIPTION  
Single Schottky rectifier suited for switchmode  
power supply and high frequency DC to DC con-  
verters.  
Packaged in D2PAK surface mount package , this  
device is intended for use in low voltage, high fre-  
quency inverters, free wheeling and polarity pro-  
tection applications.  
ABSOLUTE RATINGS  
Symbol  
(limiting values)  
Parameter  
Value  
45  
Unit  
V
VRRM  
Repetitive peak reverse voltage  
IF(RMS) RMS forward current  
50  
A
IF(AV)  
IFSM  
IRRM  
Average forward current  
Tc = 150°C  
30  
A
δ
= 0.5  
Surge non repetitive forward current  
Repetitive peak reverse current  
tp = 10 ms  
Sinusoidal  
200  
1
A
A
A
tp = 2 µs  
F = 1kHz square  
IRSM  
Tstg  
Tj  
Non Repetitive peak reverse current  
Storage temperature range  
Maximum operating junction temperature*  
Critical rate of rise of reverse voltage  
1
tp = 100µs square  
3
- 65 to + 175  
175  
°
C
°C  
µ
V/ s  
dV/dt  
10000  
dPtot  
dTj  
<
* :  
thermal runaway condition for a diode on its own heatsink  
Rth(ja)  
October 1999 - Ed: 4A  
1/5  

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