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STPS30150CW PDF预览

STPS30150CW

更新时间: 2024-09-08 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 高压高电压电源
页数 文件大小 规格书
6页 96K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS30150CW 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-247AC包装说明:R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.65其他特性:LOW LEAKAGE CURRENT
应用:HIGH VOLTAGE POWER配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:220 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:150 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS30150CW 数据手册

 浏览型号STPS30150CW的Datasheet PDF文件第2页浏览型号STPS30150CW的Datasheet PDF文件第3页浏览型号STPS30150CW的Datasheet PDF文件第4页浏览型号STPS30150CW的Datasheet PDF文件第5页浏览型号STPS30150CW的Datasheet PDF文件第6页 
STPS30150CT/CW/CFP  
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
A2  
IF(AV)  
VRRM  
2 x 15 A  
150 V  
K
Tj  
175°C  
0.75 V  
A2  
K
VF (max)  
A1  
TO-220FPAB  
STPS30150CFP  
FEATURES AND BENEFITS  
HIGH JUNCTION TEMPERATURE CAPABILITY  
GOOD TRADE OFF BETWEEN LEAKAGE  
CURRENT AND FORWARD VOLTAGE DROP  
LOW LEAKAGE CURRENT  
INSULATED PACKAGE: TO-220FPAB  
Insulating voltage: 2000V DC  
Capacitance: 45pF  
A2  
A2  
K
K
A1  
AVALANCHE CAPABILITY SPECIFIED  
A1  
TO-247  
STPS30150CW  
TO-220AB  
STPS30150CT  
DESCRIPTION  
Dual center tap schottky rectifier designed for  
high frequency Switched Mode Power  
Supplies.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Value  
150  
30  
Unit  
VRRM Repetitive peak reverse voltage  
IF(RMS) RMS forward current  
V
A
A
IF(AV)  
Average forward current TO-220FPAB Tc = 110°C per diode  
15  
δ = 0.5  
per device  
TO-220AB  
TO-247  
Tc = 155°C  
30  
220  
IFSM  
PARM Repetitive peak avalanche power  
Surge non repetitive forward current  
tp = 10 ms sinusoidal  
tp = 1µs Tj = 25°C  
A
10500  
- 65 to + 175  
175  
W
°C  
Tstg  
Tj  
Storage temperature range  
Maximum operating junction temperature *  
°C  
dV/dt Critical rate of rise of reverse voltage  
10000  
V/µs  
dPtot  
dTj  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
Rth(j a)  
July 2003 - Ed: 6C  
1/6  

STPS30150CW 替代型号

型号 品牌 替代类型 描述 数据表
STPS30150CT STMICROELECTRONICS

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