Datasheet > STPS20120C_07

STPS20120C_07

更新时间： 2024-11-19 04:30:19

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描述
Power Schottky rectifier

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STPS20120C_07 数据手册

STPS20120C

Power Schottky rectifier

Main product characteristics

I_F(AV)

V_RRM

T_j(max)

V_F(typ)

2 x 10 A

120 V

175° C

0.54 V

TO-220FPAB

STPS20120CFP

Feature and benefits

■ High junction temperature capability

■ Avalanche rated

■ Low leakage current

■ Good trade-off between leakage current and

forward voltage drop

TO-220AB

I PAK

STPS20120CT

STPS20120CR

Description

Dual center tap Schottky rectifier suited for high

frequency switch mode power supply.

Order code

Part Number

Marking

Packaged in TO-220AB, I PAK and TO-220FPAB,

this device is intended to be used in notebook and

LCD adaptors, desktop SMPS, providing in these

applications a margin between the remaining

voltages applied on the diode and the voltage

capability of the diode.

STPS20120CT

STPS20120CR

STPS20120CFP

STPS20120CT

STPS20120CR

STPS20120CFP

Table 1.

Symbol

Absolute ratings (limiting values, per diode)

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

120

I_F(RMS)

RMS forward current

T_c= 150° C Per diode

T_c= 145° C Per device

T_c= 125° C Per diode

T_c= 100° C Per device

t_p= 10 ms Sinusoidal

t_p= 1 µs T_j= 25° C

TO-220AB, I²PAK

TO-220FPAB

Average forward current,

δ = 0.5

I_F(AV)

I_FSM

P_ARM

T_stg

T_j

Surge non repetitive forward current

Repetitive peak avalanche power

Storage temperature range

150

4600

-65 to + 175

175

° C

Maximum operating junction temperature⁽¹⁾

dPtot

dTj

---------------

-------------------------

condition to avoid thermal runaway for a diode on its own heatsink

Rth(j – a)

May 2007

Rev 2

1/9

www.st.com

12 3 4 5 6 7...9

中文翻译

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