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STPS20100SHRB PDF预览

STPS20100SHRB

更新时间: 2024-11-19 13:14:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 高压高电压电源
页数 文件大小 规格书
4页 183K
描述
100V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, SMD.5, 3 PIN

STPS20100SHRB 技术参数

生命周期:Active包装说明:ROHS COMPLIANT, HERMETIC SEALED, SMD.5, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67其他特性:LOW NOISE
应用:POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.78 V
JESD-30 代码:R-XBCC-N3JESD-609代码:e4
最大非重复峰值正向电流:250 A元件数量:1
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:20 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:CHIP CARRIER认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:GOLD端子形式:NO LEAD
端子位置:BOTTOMBase Number Matches:1

STPS20100SHRB 数据手册

 浏览型号STPS20100SHRB的Datasheet PDF文件第2页浏览型号STPS20100SHRB的Datasheet PDF文件第3页浏览型号STPS20100SHRB的Datasheet PDF文件第4页 
®
STPS20100CT  
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
A2  
IF(AV)  
VRRM  
2 x 10A  
100V  
K
VF (max)  
Tj (max)  
0.7V  
175°C  
FEATURES  
Negligible switching losses  
Low forward voltage drop  
Low capacitance  
A2  
K
High reverse avalanche surge capability  
A1  
DESCRIPTION  
TO-220AB  
STP20100CT  
High voltage dual Schottky rectifier suited for  
switchmode power supplies and other power  
converters. Packaged in TO-220AB, this device  
is intended for use in medium voltage operation,  
and particularly, in high frequency circuitries  
where low switching losses and low noise are  
required.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VRRM  
Parameter  
Repetitive peak reverse voltage  
Value  
100  
30  
Unit  
V
IF(RMS)  
IF(AV)  
Per diode  
A
RMS forward current  
Per diode  
Per device  
10  
20  
A
A
Average forward current δ = 0.5  
Tc=110°C  
VR = 60V  
IFSM  
Per diode  
Per diode  
Per diode  
200  
A
Surge non repetitive forward current  
Repetitive peak reverse current  
tp=10ms  
sinusoidal  
IRRM  
1
A
tp=2µs  
F=1KHz  
IRSM  
Tstg  
Tj  
1
A
°C  
Non repetitive peak reverse current  
Storage temperature range  
tp=100µs  
- 65 to + 175  
175  
°C  
Maximum junction temperature (*)  
Critical rate of rise of reverse voltage  
dV/dt  
1000  
V/µs  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
August 2002 - Ed:2C  
1/4  

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